SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 1.
4 Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F
SW7N65B
N-channel TO-220F
MOSFET
BVDSS : 650V ID : 7.
0A RDS(ON) : 1.
4 ohm
1 2 3 1 3 2
General Description
1.
Gate 2.
Drain 3.
Source
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
Order Codes
Item 1 Sales Type SW F 7N65B Marki...