SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 0.
85Ω)@VGS=10V ■ Gate Charge (Typ 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220
SW840A
N-channel
MOSFET
BVDSS : 500V ID : 8.
5A RDS(ON) : 0.
85ohm
1 2 2 3
1.
Gate 2.
Drain 3.
Source
1
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast...