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SAMWIN
SW1N60
N-channel
MOSFET
BVDSS : 600V ID : 1.
0A RDS(ON) : 12ohm
1 1 2 2 3 3 1 2 2 3 1 3
Features
■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-251
TO-252
TO-126
1.
Gate 2.
Drain 3.
Source
General Description
This power
MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power
MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power
MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
Order Codes
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