Si2304
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
20V 3.
6A
65@ VGS=4.
5V 90@ VGS=2.
5V
NOTE The Si2304 is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
unless otherwise noted
Symbol
VDS VGS ID
Limit
20 ±8 3.
6
IDM 12
IS 1.
25 PD 1.
25
TJ,TSTG
-55 to 150
Unit
V V A
A
A W
THERMAL CHARACTERISTI...