N-Channel 30-V (D-S)
MOSFET
Si4884BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.
0090 at VGS = 10 V 30
0.
012 at VGS = 4.
5 V
ID (A)a 16.
5 13.
2
Qg (Typ.
) 10.
5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power
MOSFETs • PWM Optimized
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4884BDY-T1-E3 (Lead (Pb)-free) Si4884BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 ...