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SiHB21N60EF
Vishay Siliconix
EF Series Power
MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
84 14 24 Single
D2PAK (TO-263)
0.
176 D
GD S
G
S N-Channel
MOSFET
FEATURES • Fast body diode
MOSFET using E series
technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS • Telecommunications
- Server and telecom power supp...