IRF9Z24, SiHF9Z24
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration com VGS = - 10 V 19 5.
4 11 Single
S
FEATURES
- 60 0.
28
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
G
S G D D P-Channel
MOSFET
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all ...