IRFB11N50A, SiHFB11N50A
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 52 13 18 Single
D
FEATURES
500 0.
52
• Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche
Voltage and current • Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
com
APPLICATIONS
• Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching
TO-220
G
APPLICABLE OFF LINE SMPS TOPOLOGIES
S G D S N-Channel
MOSFET
• Two Transistor Forward • Half and Full Bridge • Power Factor Correction ...