IRFB9N30A, SiHFB9N30A
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration com VGS = 10 V 33 6.
9 12 Single
D
FEATURES
300 0.
45
• Dynamic dv/dt Rating
Available
• Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
G
S G D
S N-Channel
MOSFET
Third Generation Power
MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at lo...