IRFD9110, SiHFD9110
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration - 100 VGS = - 10 V 8.
7 2.
2 4.
1 Single
S
FEATURES
• • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available
Available
1.
2
RoHS*
COMPLIANT
www.
DataSheet4U.
com
HEXDIP
G
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be sta...