IRFI9540G, SiHFI9540G
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration com - 100 VGS = - 10 V 61 14 29 Single
S
FEATURES
• Isolated Package • High
Voltage Isolation = 2.
5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist.
= 4.
8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt • Low Thermal Resistance • Lead (Pb)-free Available
Available
0.
20
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
G
G D S
D P-Channel
MOSFET
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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