www.
vishay.
com
IRFP048R, SiHFP048R
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 38 Single
0.
018
D
TO-247AC
G
S
D G
S N-Channel
MOSFET
FEATURES
• Dynamic dV/dt rating
• Isolated central mounting hole
• 175 °C operating temperature
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
DESCRIPTION
Third generation power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for...