IRFP254N, SiHFP254N
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 100 17 44 Single
D
FEATURES
250 0.
125
• • • • • • • •
Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fully Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-247
DESCRIPTION
Fifth generation Power
MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that these Power MOSFE...