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SiHG32N50D
Vishay Siliconix
D Series Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max.
at 25 °C () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
96 18 29 Single
0.
150
TO-247AC
D
S
D G
G
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and Halogen-free
FEATURES • Optimal Design
- Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM): Ron x Qg - Fast Switching • Material categorization: For definitions of ...