Power
MOSFET
IRL620, SiHL620
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.
) (nC)
200 VGS = 5.
0 V
16
Qgs (nC)
2.
7
Qgd (nC)
9.
6
Configuration
Single
0.
80
TO-220AB
D
S D G
G
S N-Channel
MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching
Available
RoHS*
COMPLIANT
• Ease of paralleling
• Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is ...