Power
MOSFET
IRL620S, SiHL620S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC)
200 VGS = 10 V
16
Qgs (nC)
2.
9
Qgd (nC)
9.
6
Configuration
Single
0.
80
D2PAK (TO-263)
D
GD S
G
S N-Channel
MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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