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SiSS10DN
Vishay Siliconix
N-Channel 40 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.
) 0.
00265 at VGS = 10 V 0.
00360 at VGS = 4.
5 V
ID (A) a, g 60 60
Qg (TYP.
) 23 nC
PowerPAK® 1212-8S
D
D
D 6
7
5
D 8
3.
3 mm
1 Top View
3.
3 mm
1
4
3 S
2 S
S
G
Bottom View
Ordering Information: SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® Gen IV power
MOSFET
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
• 100 % Rg and UIS tested • Material categorization: for definitions of compliance
please see www.
vishay.
com/doc?99912
APPLICATIONS • Synchronous rectification • High power density DC/DC • VRMs and embe...