Part Number
|
T30N60BD1 |
Manufacturer
|
IXYS Corporation |
Description
|
IXST30N60BD1 |
Published
|
Jul 19, 2011 |
Detailed Description
|
High Speed IGBT with Diode
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
VCES IC25
VCE(sat)
Short Circuit SOA Capability
...
|
Datasheet
|
T30N60BD1
|
Overview
High Speed IGBT with Diode
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
VCES IC25
VCE(sat)
Short Circuit SOA Capability
tfi
= 600 V = 55 A = 2.
0 V = 140 ns
com
Symbol VCES VCGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.
8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C
Maximum Ratings 600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A ms W °C °C °C °C g g
TO-247AD (IXSH)
VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md
G
C
E
TO-268 (D3) (...
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