TC55V400AFT-55,-70
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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE
CMOS
262,144-WORD BY 16-BIT FULL
CMOS STATIC RAM DESCRIPTION
The TC55V400AFT is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.
Fabricated using Toshiba's
CMOS Silicon gate process technology, this device operates from a single 2.
3 to 3.
6 V power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 0.
5 mA standby current (at VDD = 3 V, Ta = 25°C, maximum) when chip enable ( CE1 ) is asserted high or (CE2) is asserted lo...