TC58BYG2S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE
CMOS
4 GBIT (512M × 8 BIT)
CMOS NAND E2PROM
DESCRIPTION
The TC58BYG2S0HBAI6 is a single 1.
8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TC58BYG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and dat...