T echcode®
N-Channel
Enhancement
Mode
MOSFET
DESCRIPTION
The TDM3518 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) 3.
1mΩ @ VGS=4.
5V RDS(ON) 1.
8mΩ @ VGS=10V
High Power and current handling capability Surface Mount Package Lead Free and Green Devices available(RoHS Compliant)
Application
PWM applications Load switch Power management Powered Systems
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source
Voltage Gate‐Source
Voltage Diode Continuous Forward C...