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Part Number
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TGA1135B |
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Manufacturer
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TriQuint Semiconductor |
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Description
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18-27.5 GHz 1W Power Amplifier |
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Published
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Apr 16, 2005 |
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Detailed Description
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Advance Product Information
Feb 4, 2000
18-27.5 GHz 1W Power Amplifier
TGA1135B
Key Features • 0.25 um pHEMT Technolo...
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Datasheet
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TGA1135B
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Overview
Advance Product Information
Feb 4, 2000
18-27.
5 GHz 1W Power Amplifier
TGA1135B
Key Features • 0.
25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA • On-chip power detector diode
Chip Dimensions 2.
641 mm x 1.
480 mm
Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications • Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA
18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz)
TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.
5 31 30.
5 P1dB (dB...
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