Part Number
|
TGF2023-01 |
Manufacturer
|
TriQuint Semiconductor |
Description
|
6 Watt Discrete Power GaN on SiC HEMT |
Published
|
Jul 1, 2012 |
Detailed Description
|
TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 38 dBm Nominal ...
|
Datasheet
|
TGF2023-01
|
Overview
TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
• • • • • • •
Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.
6 V Typical Technology: 0.
25 um Power GaN on SiC Chip Dimensions: 0.
82 x 0.
66 x 0.
10 mm
Measured Performance
Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.
6 V Typical
Primary Applications
• •
www.
DataSheet.
net/
Defense & Aerospace Broadband Wireless
Product Description
The TriQuint TGF2023-01 is a discrete 1.
25 mm GaN on SiC HEMT which operates from DC-18 GHz.
The TGF2023-01 is designed using TriQuint’s proven 0.
25um GaN production process.
This process featur...
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