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Part Number
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TGF4230-EEU |
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Manufacturer
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TriQuint Semiconductor |
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Description
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1.2mm Discrete HFET |
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Published
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Apr 16, 2005 |
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Detailed Description
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TGF4230-EEU
1.2mm Discrete HFET
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Datasheet
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TGF4230-EEU
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Overview
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TGF4230-EEU
1.
2mm Discrete HFET
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PHOTO ENLARGEMENT
1200 µm X 0.
5 µm HFET Nominal Pout of 28.
5- dBm at 8.
5- GHz Nominal Gain of 10.
0- dB at 8.
5- GHz Nominal PAE of 55% at 8.
5 - GHz
4230
Suitable for High-Reliability Applications 0,572 x 0,699 x 0,102 mm (0.
023 x 0.
028 x 0.
004 in.
)
DESCRIPTION
The Triquint TGF4230 - EEU is a single gate 1.
2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation.
Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach method...
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