MICROWAVE POWER GaN HEMT TGI1314-50LA FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.
0dBm at Pin= 42.
0dBm ･HIGH GAIN GL= 8.
0dB at 13.
75GHz to 14.
5GHz ･LOW INTERMODULATION DISTORTION IM3(Min.
)= -25dBc at Pout= 40.
0dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS Output Power Drain Current Power Added Efficiency Pout IDS1 PAE VDS= 24V IDSset= 2.
0A f = 13.
75 to 14.
5GHz @Pin= 42dBm Linear Gain Gain Flatness GL @Pin= 20dBm G 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IM3 IM3-2 IDS2 Tch Two-tone Test Po= 40.
0dBm (Single Carrier Level) f= 5MHz (IM3...

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