Part Number
|
TGI5867-25L |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaN HEMT |
Published
|
Jun 20, 2020 |
Detailed Description
|
MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 44.5dBm at Pin= 35dB...
|
Datasheet
|
TGI5867-25L
|
Overview
MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 44.
5dBm at Pin= 35dBm ŋHIGH GAIN
GL= 13.
5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -40dBc(Min.
) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 24V IDSset= 1.
75A f= 5.
85 to 6.
75 GHz @Pin= 35dBm
dBm 44.
0 44.
5
A
2.
7
3.
2
%
39
Linear Gain
Gain Flatness 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
GL G IM3 IDS2 Tch
@Pin= 20dBm
dB
dB
Two-Ton...
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