MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.
0dBm at Pin= 43dBm ŋHIGH GAIN GL= 13.
5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 4.
0A f= 5.
9 to 6.
4GHz @Pin= 43dBm dBm A % 50.
0   51.
0 10.
0 44  12.
0  Linear Gain Gain flatness 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise GL G IM3 IDS2 Tch dB @Pin= 20dBm dB Two-Tone Test d...

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