MICROWAVE POWER GaN HEMT TGI7179-60LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 48dBm at Pin= 40.
5dBm ŋHIGH GAIN GL= 12.
0dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 41dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 40V IDSset= 0.
4A f = 7.
1 to 7.
9GHz @Pin= 40.
5dBm dBm 47.
0 48.
0  A  3.
5 4.
5 %  37  Linear Gain Gain flatness GL @Pin= 20dBm G dB 11.
0 12.
0  dB   0.
8 3rd Order Intermodulation Distortion Drain Current Channel Temperature ...

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