|
Part Number
|
TGI9098-100P |
|
Manufacturer
|
Toshiba |
|
Description
|
MICROWAVE POWER GaN HEMT |
|
Published
|
Jun 20, 2020 |
|
Detailed Description
|
FEATURES
ŋINTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN
GL= 12.0dB at 9.0GHz to 9.8GHz ŋHER...
|
|
Datasheet
|
TGI9098-100P
|
Overview
FEATURES
ŋINTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 50.
0dBm at Pin= 42dBm ŋHIGH GAIN
GL= 12.
0dB at 9.
0GHz to 9.
8GHz ŋHERMETICALLY SEALED PACKAGE ŋPULSE OPERATION
Pulse width= 100μs, Duty cycle= 10%
MICROWAVE POWER GaN HEMT
TGI9098-100P
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power (pulsed) Drain Current (pulsed) Power Added Efficiency
SYMBOL Pout IDS1 add
CONDITIONS
VDS= 24V IDSset= 6A f= 9.
0 to 9.
8 GHz @Pin= 42dBm Pulse width=100μs Duty cycle=10%
Linear Gain
GL
@Pin= 35dBm
Recommended Gate Resistance (Rg): 10
UNIT MIN.
TYP.
MAX.
dBm A % dB
49.
0
50.
0 10.
0 40 12.
0
13.
0
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconduct...
Similar Datasheet