FEATURES
･BROAD BAND 2-STAGE AMPLIFIER ･HIGH POWER
Pout= 44.
0dBm at Pin= 23.
0dBm ･HIGH GAIN
GL= 24dB(Typ) at Pin= 7dBm ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaN AMPLIFIER
TGM9398-25
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power Drain Current Power Added Efficiency Linear Gain IDD=IDD1+ IDD2
SYMBOL
CONDITIONS
Pout IDD*
add
VDD1,VDD2= 24V IDDset= 1.
2A
@Pin= 23.
0dBm f = 9.
3 to 9.
8GHz
GL
@Pin= 7dBm
UNIT dBm
A % dB
MIN.
43.
0 20
TYP.
MAX.
44.
0
2.
6
3.
5
38
24
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
Drain- Source
Voltage
VDD1, VDD2
Gate- Source
Voltage
VGG1,VGG2
Drain Current
IDD1 IDD2
Flange Temperature
...