TH58NVG4S0HTA20
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE
CMOS
16 GBIT (2G 8 BIT)
CMOS NAND E2PROM
DESCRIPTION
The TH58NVG4S0HTA20 is a single 3.
3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 8192blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes 16 Kbytes: 4352 bytes 64 pages).
The TH58NVG4S0HTA20 is a serial-type memory device which utilizes the I/O pins for both address and...