isc Thyristors
INCHANGE Semiconductor
TIC116series
DESCRIPTION ·8A contimunous on-state current ·80A surge-current ·Glass passivated Wafer ·400V to 800V off-state
Voltage ·Max IGT of 20mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
TIC116D
400
VDRM
Repetitive
voltage
peakoff-state TIC116M
TIC116S
600 700
V
TIC116N
800
TIC116D
400
VRRM
Repetitive
voltage
peakreverse TIC116M
TIC116S
600 700
V
TIC116N
800
IT(AV) IT(RMS)
ITM PGM PG(AV) Tj Tstg
On-state current Tc=70℃ RMS on-state current Tc=70℃ Surge peak on-state current Peak gate power PW≤300μs ...