com TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.
5dBm at 10.
7GHz to 11.
7GHz „ HIGH GAIN G1dB=7.
5dB at 10.
7GHz to 11.
7GHz „ „ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE „ RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 G1dB VDS= 9V 6.
5   Two Tone Test P=22dBm (Single Carrier Level) SYMBOL P1dB CONDITION MIN.
TYP.
MAX.
UNIT 32.
5 33.
5 7.
5 0.
85 24 -45 0.
85    1.
1   1.
1 80 d...

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