TIM1011-8L

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level „ HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz „ HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF P...