MICROWAVE POWER GaAs FET TIM1314-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.
0dBm at 13.
75GHz to 14.
5GHz ŋHIGH GAIN G1dB= 5.
0dB at 13.
75GHz to 14.
5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.
) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 7.
0A f= 13.
75 to 14.
5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone ...

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