FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.
0dBm at 13.
75GHz to 14.
5GHz ･HIGH GAIN G1dB= 7.
0dB at 13.
75GHz to 14.
5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1314-8UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 2.
0A f = 13.
75 to 14.
5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 27.
0dBm, f= 5MHz...

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