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Part Number
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TIM1414-4LA |
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Manufacturer
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Toshiba |
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Description
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Microwave Power GaAs FET |
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Published
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Jul 30, 2006 |
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Detailed Description
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com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=36.5dB...
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Datasheet
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TIM1414-4LA
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Overview
com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=36.
5dBm at 14.
0GHz to 14.
5GHz n HIGH GAIN G1dB=6.
5dB at 14.
0GHz to 14.
5GHz
TIM1414-4LA P reliminaly
n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 9V Power Gain at 1dB G1dB f= 14.
0 to 14.
5GHz Compression Point Drain Current IDS1 ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆TchDataSheet4U.
com Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=25dBm (Single Carrier Level) ...
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