|
Part Number
|
TIM1414-5L |
|
Manufacturer
|
Toshiba |
|
Description
|
Microwave Power GaAs FET |
|
Published
|
Jul 30, 2006 |
|
Detailed Description
|
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 37.5dBm at 14.0GHz to 14.5GHz ･HIGH GAIN
G1dB= 6.0dB at 14...
|
|
Datasheet
|
TIM1414-5L
|
Overview
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 37.
5dBm at 14.
0GHz to 14.
5GHz ･HIGH GAIN
G1dB= 6.
0dB at 14.
0GHz to 14.
5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-5L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB IDS1
VDS= 9V IDSset= 2.
0A f= 14.
0 to 14.
5GHz
UNIT dBm dB
A
Gain Flatness
G
dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 26.
0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
...
Similar Datasheet