Part Number
|
TIM3742-8UL |
Manufacturer
|
Toshiba Semiconductor |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Dec 3, 2006 |
Detailed Description
|
com
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM3742-8UL
HIGH POWE...
|
Datasheet
|
TIM3742-8UL
|
Overview
com
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM3742-8UL
HIGH POWER P1dB=39.
5dBm at 3.
7GHz to 4.
2GHz HIGH GAIN G1dB=11.
0dB at 3.
7GHz to 4.
2GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 28.
5dBm
(Single Carrier Level)
SYMBOL P1dB
CONDITION
UNIT MIN.
TYP.
MAX.
dBm 38.
5 10.
0 -44 39.
5 11.
0 2.
2...
Similar Datasheet