com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM4450-4UL „ HIGH POWER P1dB=36.
5dBm at 4.
4GHz to 5.
0GHz „ HIGH GAIN G1dB=11.
0dB at 4.
4GHz to 5.
0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 25.
5dBm (Single Carrier Level) SYMBOL P1dB CONDITION UNIT MIN.
TYP.
MAX.
dBm 35.
5 10.
0    -44   36.
5 11.
0 1.
1...

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