com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-60SL TECHNICAL DATA FEATURES T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.
5dBm Single Carrier Level T HIGH POWER P1dB=48.
0dBm at 4.
4GHz to 5.
0GHz T HIGH GAIN G1dB=9.
5dB at 4.
4GHz to 5.
0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) UNIT dBm dB A dB % dBc A °C MIN.
47.
0 8.
5    -42   TYP.
MAX.
48.
0  9.
5 13.
2  42 -45    15.
0 ±0.
8   11.
8 100 CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1dB Gain P1dB Compression Point Power Gain at 1dB Gain G1dB VDS= 10V Compression Point f = 4.
4 to 5.
0GHz IDSset≅9.
5A Drain Current IDS1 G...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)