TIM5964-12UL

MICROWAVE POWER GaAs FET TIM5964-12UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 41.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power a...