TIM5964-60SL-422

MICROWAVE POWER GaAs FET TIM5964-60SL-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 48.0dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output ...