FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.
5dBm at 6.
4GHz to 7.
2GHz ･HIGH GAIN G1dB= 9.
5dB at 6.
4GHz to 7.
2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-16UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 3.
6A f = 6.
4 to 7.
2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 31.
5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X R...

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