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Part Number
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TIM6472-60SL |
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Manufacturer
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Toshiba |
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Description
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MICROWAVE POWER GaAs FET |
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Published
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Jun 20, 2020 |
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Detailed Description
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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.0dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 7.5dB at 6.4G...
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Datasheet
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TIM6472-60SL
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Overview
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.
0dBm at 6.
4GHz to 7.
2GHz ･HIGH GAIN
G1dB= 7.
5dB at 6.
4GHz to 7.
2GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 36.
5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-60SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 9.
5A f = 6.
4 to 7.
2GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 36.
5dBm, f= 5MHz
(Singl...
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