Part Number
|
TIM7179-30UL |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jun 19, 2020 |
Detailed Description
|
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.0dBm at 7.1GHz to 7.9GHz ・HIGH GAIN
G1dB= 8.5dB at 7.1G...
|
Datasheet
|
TIM7179-30UL
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.
0dBm at 7.
1GHz to 7.
9GHz ・HIGH GAIN
G1dB= 8.
5dB at 7.
1GHz to 7.
9GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7179-30UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 6.
4A f = 7.
1 to 7.
9GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 34.
0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X R...
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