Part Number
|
TIM7785-12UL |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jun 20, 2020 |
Detailed Description
|
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 41.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7G...
|
Datasheet
|
TIM7785-12UL
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 41.
5dBm at 7.
7GHz to 8.
5GHz ・HIGH GAIN
G1dB= 8.
5dB at 7.
7GHz to 8.
5GHz ・LOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 30.
5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-12UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 2.
6A f = 7.
7 to 8.
5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test Po= 30.
5dBm, Δf= 5MHz
dBc
(Single...
Similar Datasheet