Part Number
|
TIM7785-25UL |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jun 19, 2020 |
Detailed Description
|
MICROWAVE POWER GaAs FET
TIM7785-25UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 44.5dBm at 7.7GHz to...
|
Datasheet
|
TIM7785-25UL
|
Overview
MICROWAVE POWER GaAs FET
TIM7785-25UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 44.
5dBm at 7.
7GHz to 8.
5GHz ŋHIGH GAIN
G1dB= 8.
5dB at 7.
7GHz to 8.
5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 33.
5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 5.
2A f= 7.
7 to 8.
5GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test
dBc
P...
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