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Part Number
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TIM7785-4UL |
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Manufacturer
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Toshiba Semiconductor |
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Description
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MICROWAVE POWER GaAs FET |
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Published
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Nov 15, 2006 |
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Detailed Description
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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7G...
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Datasheet
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TIM7785-4UL
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Overview
FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 36.
5dBm at 7.
7GHz to 8.
5GHz ･HIGH GAIN
G1dB= 8.
5dB at 7.
7GHz to 8.
5GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 ∆G
VDS= 10V IDSset= 0.
9A f = 7.
7 to 8.
5GHz
UNIT dBm dB
A dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 25.
5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
X Rt...
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