| Part Number | TIP30C |
| Manufacturer | SavantIC |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-220C package ·Complement to type TIP29/29A/29B/29C APPLICATIONS ·For use in general purpose power amplifer and switching applications P... |
| Features |
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| File Size | 99.61KB |
| Datasheet |
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TIP30C : TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO 40 60 80 100 Vdc Collector − Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCB Vdc 40 60 80 100 Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 1.0 A.
TIP30C : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter (sus) Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Collector Current Peak Base Current Power Dissipation upto Tc=25ºC Power Dissipation upto Ta=25ºC Derate above 25ºC Storage Temperature Junction Temperature VCEO VCBO VEBO IC ICM .
TIP30C : TIP30 Series(TIP30/30A/30B/30C) TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C 1 TO-220 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP30 : TIP30A : TIP30B : TIP30C 1.Base Value - 40 - 60 - 80 - 100 - 40 - 60 - 80 - 100 -5 -1 -3 - 0.4 30 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage : TIP30 : TIP30A : TIP30B : TIP30C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junc.
TIP30C : TIP30 TIP30A TIP30B TIP30C SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP30 series devices are silicon PNP epitaxial-base power transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP30 Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg TIP30A TIP30B TIP30C 60 8.
TIP30C : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.5 4 1.0 0.5 0.8 200 2N5296 NPN 60 40 5 36 4 5004 50 30 120 1.0 4 1.0 1.0 0.8 200 2N5298 NPN 80 60 5 36 4 5004 50 20 80 1.5 4 1.0 1.5 0.8 200 2N6107 PNP 80 70 5 40 7 10001 60 30 150 2.3 2.0 4 7.0 4 3.